2SB557 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SB557

Silicon PNP Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -120V(Min)

·High Power Dissipation-

: PC= 80W(Max)@TC=25℃

·Complement to Type 2SD427

APPLICATIONS

·Designed for power amplifier applications.

·Recommended for 50W high-fidelity audio frequency

amplifier output stage.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-8

A

IE

Emitter Current-Continuous

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

8

A

80

W

150

℃

Tstg

Storage Temperature

-65~150 ℃

2SB557

SPTECH website：www.superic-tech.com

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