IRF7493TRPBF-1 Просмотр технического описания (PDF) - International Rectifier

Номер в каталоге

Компоненты Описание

Список матч

IRF7493TRPBF-1

HEXFET® Power MOSFET

International Rectifier 

IRF7493PbF-1

100

VGS

TOP 15V

10V

8.0V

5.5V

10

5.0V

4.5V

4.0V

BOTTOM 3.5V

1

3.5V

0.1

0.01

0.1

20μs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

VGS

TOP 15V

10V

8.0V

5.5V

5.0V

4.5V

10

4.0V

BOTTOM 3.5V

3.5V

1

0.1

0.1

20μs PULSE WIDTH

Tj = 150°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100.00

10.00

TJ = 150°C

2.0

ID = 9.3A

VGS = 10V

1.5

TJ = 25°C

1.00

1.0

0.10

3.0

VDS = 25V

20μs PULSE WIDTH

4.0

5.0

6.0

VGS, Gate-to-Source Voltage (V)

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics

3

www.irf.com © 2014 International Rectifier

Fig 4. Normalized On-Resistance

Vs. Temperature

Submit Datasheet Feedback

June 23, 2014

Share Link: