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IRF7493TRPBF-1

HEXFET® Power MOSFET

International Rectifier 

IRF7493PbF-1

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

Drain-to-Source Breakdown Voltage

80 ––– ––– V VGS = 0V, ID = 250μA

ΔΒVDSS/ΔTJ

RDS(on)

Breakdown Voltage Temp. Coefficient ––– 0.074 ––– mV/°C Reference to 25°C, ID = 1mA

e Static Drain-to-Source On-Resistance ––– 11.5 15 mΩ VGS = 10V, ID = 5.6A

VGS(th)

Gate Threshold Voltage

2.0 ––– 4.0 V VDS = VGS, ID = 250μA

IDSS

Drain-to-Source Leakage Current

––– ––– 20 μA VDS = 80V, VGS = 0V

––– ––– 250

VDS = 64V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 200 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -200

VGS = -20V

Dynamic @ TJ = 25°C (unless otherwise specified)

gfs

Forward Transconductance

13 ––– –––

Qg

Total Gate Charge

––– 35 53

Qgs

Gate-to-Source Charge

––– 5.7 –––

Qgd

Gate-to-Drain Charge

––– 12 –––

td(on)

Turn-On Delay Time

––– 8.3 –––

tr

Rise Time

––– 7.5 –––

td(off)

Turn-Off Delay Time

––– 30 –––

tf

Fall Time

––– 12 –––

Ciss

Input Capacitance

––– 1510 –––

Coss

Output Capacitance

––– 320 –––

Crss

Reverse Transfer Capacitance

––– 130 –––

Coss

Output Capacitance

––– 1130 –––

Coss

Output Capacitance

––– 210 –––

Crss eff.

Effective Output Capacitance

––– 320 –––

S VDS = 15V, ID = 5.6A

ID = 5.6A

VDS = 40V

VGS = 10V

e VDD = 40V,

ID = 5.6A

ns RG = 6.2Ω

VGS = 10V

VGS = 0V

pF VDS = 25V

ƒ = 1.0MHz

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 64V, ƒ = 1.0MHz

g VGS = 0V, VDS = 0V to 64V

Avalanche Characteristics

EAS

IAR

d Parameter

Single Pulse Avalanche Energy

Ù Avalanche Current

Typ.

–––

–––

Max.

180

5.6

Units

mJ

A

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Min. Typ. Max. Units

Conditions

––– ––– 9.3

MOSFET symbol

––– ––– 74

A showing the

integral reverse

––– ––– 1.3

p-n junction diode.

e V TJ = 25°C, IS = 5.6A, VGS = 0V

––– 37

––– 52

56

78

e ns TJ = 25°C, IF = 5.6A, VDD = 15V

nC di/dt = 100A/μs

2

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June 23, 2014

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