IRF6617PBF Просмотр технического описания (PDF) - International Rectifier

Номер в каталоге

Компоненты Описание

Список матч

IRF6617PBF

DirectFET Power MOSFET

International Rectifier 

IRF6617PbF

+

‚

-



RG

D.U.T

+

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

ƒ

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance

Current Transformer

-„ +

D.U.T. ISD Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. VDS Waveform

Diode Recovery

dv/dt

• di/dt controlled by RG

• Driver same type as D.U.T.

VDD

+

• ISD controlled by Duty Factor "D"

-

• D.U.T. - Device Under Test

Re-Applied

Voltage

Body Diode

IInndduuccttoorr CCuurrernetnt

Forward Drop

Ripple ≤ 5%

* VGS = 5V for Logic Level Devices

* VGS=10V

VDD

ISD

Fig 17. Diode Reverse Recovery Test Circuit for N-Channel

HEXFET® Power MOSFETs

DirectFET™ Substrate and PCB Layout, ST Outline

(Small Size Can, T-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

G = GATE

D = DRAIN

S = SOURCE

D

D

S

G

S

D

D

6

www.irf.com

Share Link: