IRF6617PBF Просмотр технического описания (PDF) - International Rectifier

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IRF6617PBF

DirectFET Power MOSFET

International Rectifier 

24

ID = 15A

20

16

12

TJ = 125°C

8

4

2.0

TJ = 25°C

4.0

6.0

8.0

10.0

VGS, Gate-to-Source Voltage (V)

Fig 12. On-Resistance Vs. Gate Voltage

15V

VDS

L

DRIVER

RG

2V0GVS

tp

D.U.T

IAS

0.01Ω

+

- VDD

A

Fig 14a. Unclamped Inductive Test Circuit

LD

VDS

+

VDD -

VGS

Pulse Width < 1µs

Duty Factor < 0.1%

D.U.T

Fig 15a. Switching Time Test Circuit

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

D.U.T.

+

-VDS

VGS

3mA

IG

ID

Current Sampling Resistors

Fig 16a. Gate Charge Test Circuit

www.irf.com

IRF6617PbF

120

ID

100

TOP

5.2A

7.9A

BOTTOM 12A

80

60

40

20

0

25

50

75

100

125

150

Starting TJ, Junction Temperature (°C)

Fig 13. Maximum Avalanche Energy Vs. Drain Current

V(BR)DSS

tp

IAS

Fig 14b. Unclamped Inductive Waveforms

VDS

90%

10%

VGS

td(on) tr

td(off) tf

Fig 15b. Switching Time Waveforms

Id

Vds

Vgs

Vgs(th)

Qgs1 Qgs2 Qgd

Qgodr

Fig 16b. Gate Charge Waveform

5

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