ATP114 Просмотр технического описания (PDF) - ON Semiconductor

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ATP114

P-Channel Power MOSFET

ON Semiconductor 

Ordering number : ENA1711A

ATP114

P-Channel Power MOSFET

–60V, –55A, 16mΩ, Single ATPAK

http://onsemi.com

Features

• ON-resistance RDS(on)1=12mΩ(typ.)

• 4V drive

• Protection diode in

• Input Capacitance Ciss=4000pF(typ.)

• Halogen free compliance

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Drain-to-Source Voltage

VDSS

Gate-to-Source Voltage

Drain Current (DC)

VGSS

ID

Drain Current (PW≤10μs)

IDP

Allowable Power Dissipation

PD

Channel Temperature

Tch

Storage Temperature

Tstg

Avalanche Energy (Single Pulse) *1

EAS

Avalanche Current *2

IAV

Note :*1 VDD=--15V, L=200μH, IAV=--28A

*2 L≤100μH, Single pulse

Conditions

PW≤10μs, duty cycle≤1%

Tc=25°C

Ratings

Unit

--60

V

±20

V

--55

A

--165

A

60

W

150

°C

--55 to +150

°C

100 mJ

--28

A

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

7057-001

6.5

4

1.5

0.4

ATP114-TL-H

4.6

2.6

0.4

Product & Package Information

• Package

: ATPAK

• JEITA, JEDEC

:-

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TL

TL

Marking

ATP114

LOT No.

2

1

3

0.8

0.6

2.3 2.3

0.55

0.4

1 : Gate

2 : Drain

3 : Source

4 : Drain

ATPAK

Electrical Connection

2,4

1

3

Semiconductor Components Industries, LLC, 2013

July, 2013

61312 TKIM/70710PA TKIM TC-00002342 No. A1711-1/7

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