SSF2816EB Просмотр технического описания (PDF) - Silikron Semiconductor Co.,LTD.

Номер в каталоге

Компоненты Описание

Список матч

SSF2816EB

High Power and current handling capability

Silikron Semiconductor Co.,LTD. 

DESCRIPTION

The SSF2816EB uses advanced trench technology to

provide excellent RDS(ON), low gate charge and operation

with gate voltages as low as 0.75V.

SSF2816EB

GENERAL FEATURES

● VDS = 20V,ID = 7A

RDS(ON) < 30mΩ @ VGS=2.5V

RDS(ON) < 26mΩ @ VGS=3.1V

RDS(ON) < 23mΩ @ VGS=4V

RDS(ON) < 22mΩ @ VGS=4.5V

ESD Rating：2500V HBM

● High Power and current handling capability

● Lead free product is acquired

● Surface Mount Package

Schematic diagram

Marking and pin Assignment

Application

●Battery protection

●Load switch

●Power management

TSSOP-8 top view

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking

Device

Device Package

Reel Size

SSF2816EB

SSF2816EB

TSSOP-8

Ø330mm

Tape width

12mm

Quantity

3000 units

ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Drain Current-Continuous@ Current-Pulsed (Note 1)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

ID

IDM

PD

TJ,TSTG

Limit

20

±12

7

25

1.5

-55 To 150

Unit

V

V

A

A

W

℃

THERMAL CHARACTERISTICS

Thermal Resistance,Junction-to-Ambient (Note 2)

RθJA

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

83

℃/W

Min Typ Max Unit

20

V

©Silikron Semiconductor CO.,LTD.

1

http://www.silikron.com

v1.1

Share Link: