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IN74HCT20A

Dual 4-Input NAND Gate High-Performance Silicon-Gate CMOS

IK Semicon Co., Ltd 

IN74HCT20A

AC ELECTRICAL CHARACTERISTICS (VCC =5.0 V ±10%,CL=50pF,Input tr=tf=6.0 ns)

Symbol

Parameter

tPLH, tPHL

tTLH, tTHL

CIN

Maximum Propagation Delay, Input A ,B,C or D

to Output Y (Figures 1 and 2)

Maximum Output Transition Time, Any Output

(Figures 1 and 2)

Maximum Input Capacitance

Guaranteed Limit

25 °C

to

-55°C

≤85°C ≤125°C Unit

28

35

42

ns

15

19

22

ns

10

10

10

pF

Power Dissipation Capacitance (Per Gate)

CPD Used to determine the no-load dynamic power

consumption:

PD=CPDVCC2f+ICCVCC

Typical @25°C,VCC=5.0 V

29

pF

Figure 1. Switching Waveforms

Figure 2. Test Circuit

EXPANDED LOGIC DIAGRAM

(1/2 of the Device)

Rev. 00

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