IN74HCT20A Просмотр технического описания (PDF) - IK Semicon Co., Ltd

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IN74HCT20A

Dual 4-Input NAND Gate High-Performance Silicon-Gate CMOS

IK Semicon Co., Ltd 

IN74HCT20A

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

Symbol

Parameter

Test Conditions

VIH Minimum High-

VOUT=0.1 V or VCC-0.1 V

Level Input Voltage ⎢IOUT⎢≤ 20 µA

VIL Maximum Low -

VOUT=0.1 V or VCC-0.1 V

Level Input Voltage ⎢IOUT⎢ ≤ 20 µA

VOH Minimum High-

VIN= VIH or VIL

Level Output Voltage ⎢IOUT⎢ ≤ 20 µA

VIN= VIH or VIL

⎢IOUT⎢ ≤ 4.0 mA

VOL Maximum Low-

VIN=VIH

Level Output Voltage ⎢IOUT⎢ ≤ 20 µA

VIN=VIH

⎢IOUT⎢ ≤ 4.0 mA

IIN

Maximum Input

Leakage Current

VIN=VCC or GND

ICC

Maximum Quiescent VIN=VCC or GND

Supply Current

IOUT=0µA

(per Package)

∆ICC Quiescent Additional VIN=2.4 V,Any One Input

Supply Current

VIN=VCC or GND, Other

Inputs

IOUT=0µA

VCC Guaranteed Limit

V 25 °C ≤85 ≤125 Unit

to

°C °C

-55°C

4.5 2.0 2.0 2.0 V

5.5 2.0 2.0 2.0

4.5 0.8 0.8 0.8 V

5.5 0.8 0.8 0.8

4.5 4.4 4.4 4.4 V

5.5 5.4 5.4 5.4

4.5 3.98 3.84 3.7

4.5 0.1 0.1 0.1 V

5.5 0.1 0.1 0.1

4.5 0.26 0.33 0.4

5.5 ±0.1 ±1.0 ±1.0 µA

5.5 2.0 20 40 µA

≥-55 °C 25 °C to mA

125°C

5.5

2.9

2.4

Rev. 00

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