datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать

M6MF16S2AVP Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC

Номер в каталоге
Компоненты Описание
Список матч
M6MF16S2AVP Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
PRELIMINARY Notice
Some
p: aTrhaims iestrnicotlima iftisnaalrsepseucbifjieccattitoonc. hange.
MITSUBISHI LSIs
M6MF16S2AVP
16777216-BIT (2 M x 8-BIT)
CMOS 3.3V-ONLY FLASH MEMORY
Read/Write Mode (CE# control)
Symbol
Parameter
Limits
Unit
Min
Typ
Max
tWC tAVAV Write cycle time
tAS tAVWL Address set-up time
110
ns
50
ns
tAH tWLAX Address hold time
tDS tDVWH Data set-up time
tDH tWHDX Data hole time
tWS tELWL Write enable set-up time
tWH tWHEH Write enable hold time
tCEP tWLWH CE# pulse width
tCEPH tWHWL CE# pulse width high
tBLS
tWPS tPHHWH Block Lock set-up to write enable high
10
ns
50
ns
10
ns
0
ns
0
ns
60
ns
20
ns
110
ns
tBLH
tWPH tPHHWH Block lock hold from valid SRD
0
ns
tDAP tWHRH1 Duration of auto-program operation
5
80
ms
tDAE tWHRH2 Duration of auto-erase operation
50
600
ms
tEHRL tEHRL Chip enable high to RY/BY# low
110
ns
tPS tPHWL RP# high recovery to write enable low
500
ns
Read timing parameters during command write operations mode are the same as during read-only operations mode.
Typical values at Vcc=3.3V, Ta=25°C
Erase and Program Performance
Parameter
Block Erase Time
Block Program Time (Page Mode)
Page Program Time
Limits
Unit
Min
Typ
Max
40
600
ms
1.3
5
sec
4
80
ms
Vcc Power UP/Down Timing
Symbol
Parameter
tVCS
RP# =VIH set-up time from Vcc at 2.7V
Limits
Min
Typ
2
During power up/down, by the noise pulses on control pins, the device has possibility of accidental erasure or programming.
The device must be protected against initiation of write cycle for memory contents during power up/down.
The delay time of min.2usec is always required before read operation or write operation is initiated from the time Vcc reaches
2.7V during power up. By holding RP# VIL, the contents of memory is protected during Vcc power up/down.
During power up, RP# must be held VIL for min.2us from the time Vcc reaches 2.7V.
During power down, RP# must be held VIL until Vcc reaches GND.
RP# doesn't have latch mode ,so RP# must be held VIH during read operation or erase/program operation.
Max
Unit
µs
9
May.1998 , Rev.1.2

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]