M6MF16S2AVP Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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M6MF16S2AVP
MITSUBISHI ELECTRIC
M6MF16S2AVP Datasheet PDF : 20 Pages
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PRELIMINARY Notice
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MITSUBISHI LSIs
M6MF16S2AVP
16777216-BIT (2 M x 8-BIT)
CMOS 3.3V-ONLY FLASH MEMORY
DEVICE IDENTIFIER CODE
Code
Pins
A0
Manufacturer Code
VIL
Device Code
VIH
D7
D6
D5
D4
D3
D2
D1
D0
Hex. Data
0
0
0
1
1
1
0
0
1CH
0
1
1
0
1
0
0
1
69H
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Min.
Max. Unit
F-Vcc
VI1
Vcc voltage (Flash Memory)
All input or output voltage except1f)or Vcc,RP#
with respect to Ground
-0.2
4.6
V
-0.2
4.6
V
VI2
RP# supply voltage
Ta
Ambient temperature
-0.6
14.0
V
-20
85
°C
Tbs
Temperature under bias
-30
85
°C
Tstg
Storage temperature
-65
125
°C
I OUT
Output short circuit current
100
mA
1) Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage
on input/output pins is VCC+0.5V which, during transitions, may overshoot to VCC+1.5V for periods <20ns.
CAPACITANCE
Symbol
CIN
COUT
Parameter
Input capacitance (address, Control Pins)
Output capacitance
Test conditions
Limits
Min. Typ. Max.
Unit
Ta = 25°C, f=1MHz, VIN=VOUT=0V
8
pF
12
pF
Note: The value of common pins to SRAM is the sum of Flash Memory and SRAM.
DC ELECTRICAL CHARACTERISTICS ( Ta = -20 ~ 85°C, Vcc = 2.7V ~ 3.6V, unless otherwise noted )
Symbol
Parameter
ILI
Input leakage current
ILO Output leakage current
ISB1 Vcc standby current
ISB2
ISB3
Vcc deep powerdown current
ISB4
ICC1 Vcc read currenr
ICC2
ICC3
ICC4
ICC5
I RP
VIHH
VIL
VIH
VOL
VOH1
VOH2
VLKO
Vcc write current
Vcc program currenrt
Vcc erase current
Vcc suspend current
RP# block unlock current
RP# block unlock voltage
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Low Vcc Lock-Out voltage 2)
Test conditions
0V ≤ VIN ≤ F-VCC
0V ≤ VOUT ≤ F-VCC
F-Vcc = 3.6V, VIN=VIL/VIH, F-CE#=F-RP#=F-WP1#,WP2#=VIH
± F-Vcc=3.6V,VIN=F-GND or F-Vcc, F-CE#=F-RP#=F-WP1#,WP2#=Vcc 0.3V
F-VCC = 3.6V, VIN=VIL/VIH, F-RP#= VIL
Limits
Min Typ
50
0.1
5
F-Vcc = 3.6V, VIN=F-GND or F-Vcc, F-RP#=F-GND±0.3V
0.1
F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = VIL,
F-RP#=F-OE#=VIH, f = 5MHz, IOUT = 0mA
7
F-Vcc=3.6V,VIN=VIL/VIH,F-CE#=F-WE#=VIL,F-RP#=F-OE#=VIH
F-Vcc = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP1#,WP2# = VIH
F-Vcc = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP1#,WP2# = VIH
F-Vcc = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP1#,WP2# = VIH
F-RP# = VHH max
11.4 12.0
– 0.5
2.0
IOL = 4.0mA
IOH = –2.5mA
IOH = –100µA
0.85Vcc
Vcc–0.4
1.5
Max
±1.0
±10
200
5
15
5
Unit
µA
µA
µA
µA
µA
µA
25 mA
30 mA
30 mA
40 mA
200
µA
500
µA
12.6
V
0.8
V
Vcc+0.5 V
0.45
V
V
V
2.5
V
All currents are in RMS unless otherwise noted.
1) Typical values at Vcc=3.3V, Ta=25°C
2) To protect against initiation of write cycle during Vcc power-up/ down, a write cycle is locked out for Vcc less than VLKO.
If Vcc is less than VLKO, Write State Machine is reset to read mode. When the Write State Machine is in Busy state, if Vcc is less than VLKO, the alteration of memory contents
may occur.
7
May.1998 , Rev.1.2
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