D2406 Просмотр технического описания (PDF) - Inchange Semiconductor

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D2406

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD2406

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 10mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A

VBE(on) Base-Emitter On Voltage

IC= 3A; VCE= 5V

ICBO

Collector Cutoff Current

VCB= 80V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 0.5A; VCE= 5V

hFE-2

DC Current Gain

IC= 3A; VCE= 5V

COB

Output Capacitance

fT

Current-Gain—Bandwidth Product

IE= 0; VCB= 10V; ftest= 1MHz

IC= 0.5A; VCE= 5V

MIN TYP. MAX UNIT

80

V

5

V

1.5

V

1.5

V

30 μA

100 μA

70

240

15

90

pF

8

MHz

‹ hFE-1 Classifications

O

Y

70-140 120-240

isc Website：www.iscsemi.cn

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