D2406 Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге

Компоненты Описание

Список матч

D2406

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD2406

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 80V(Min)

·Collector Power Dissipation-

: PC= 25W@ TC= 25℃

·Good Linearity of hFE

APPLICATIONS

·Designed for power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

4

A

IB

Base Current-Continuous

Collector Power Dissipation

PC

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature

0.4

A

25

W

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

Share Link: