PHD95N03LT Просмотр технического описания (PDF) - Philips Electronics
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PHD95N03LT Datasheet PDF : 13 Pages
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Philips Semiconductors
PHD95N03LT
N-channel enhancement mode field-effect transistor
9. Package outline
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
seating plane
y
A
E
A
A2
b2
A1
D1
mounting
base
E1
D
HE
L2
2
1
L
3
b1
e
b
wM A
e1
L1
c
0
10 20 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT max.
A1(1)
A2
b
b1
max.
b2
c
D D1 E E1
max. max. max. min.
e
e1
HE
max.
L
L1
min.
L2
mm
2.38
2.22
0.65
0.45
0.89
0.71
0.89
0.71
1.1
0.9
5.36
5.26
0.4
0.2
6.22 4.81 6.73
5.98 4.45 6.47
4.0 2.285 4.57 10.4 2.95
9.6 2.55
0.5
0.7
0.5
Note
1. Measured from heatsink back to lead.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN
PROJECTION
SOT428
TO-252
SC-63
w
y
max.
0.2 0.2
ISSUE DATE
98-04-07
99-09-13
Fig 14. SOT428 (D-PAK).
9397 750 08216
Product data
Rev. 01 — 18 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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