PHD95N03LT Просмотр технического описания (PDF) - Philips Electronics
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PHD95N03LT Datasheet PDF : 13 Pages
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Philips Semiconductors
PHD95N03LT
N-channel enhancement mode field-effect transistor
2.5
VGS(th)
(V)
2
1.5
1
max
typ
min
03aa33
10-1
ID
(A)
10-2
10-3
10-4
03aa36
min typ max
0.5
10-5
0
-60
0
60
120
180
Tj (oC)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
10-6
0
0.5
1
1.5
2
2.5
3
VGS (V)
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
104
Ciss
Coss
Crss
(pF)
103
03ad83
Ciss
Coss
Crss
102
10-1
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 08216
Product data
Rev. 01 — 18 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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