PHP27NQ11T Просмотр технического описания (PDF) - NXP Semiconductors.

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PHP27NQ11T

N-channel TrenchMOS standard level FET

NXP Semiconductors. 

Nexperia

PHP27NQ11T

N-channel TrenchMOS standard level FET

120

Ider

(%)

80

03aa24

120

Pder

(%)

80

03aa16

40

40

0

0

50

100

150

200

Tmb (°C)

0

0

50

100

150

200

Tmb (°C)

Fig 1. Normalized continuous drain current as a

function of mounting base temperature

103

ID

Limit RDSon = VDS /ID

(A)

102

10

DC

1

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

03ao61

tp = 10 μs

100 μs

1 ms

10 ms

100 ms

10−1

1

10

102

103

VDS (V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

PHP27NQ11T_2

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 02 — 4 March 2010

© Nexperia B.V. 2017. All rights reserved

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