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PHP27NQ11T

N-channel TrenchMOS standard level FET

NXP Semiconductors. 

PHP27NQ11T

N-channel TrenchMOS standard level FET

Rev. 02 — 4 March 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

„ Higher operating power due to low

thermal resistance

„ Low conduction losses due to low

on-state resistance

1.3 Applications

„ DC-to-DC convertors

„ Switched-mode power supplies

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter

VDS

drain-source voltage

ID

drain current

Ptot

total power dissipation

Dynamic characteristics

QGD

gate-drain charge

Static characteristics

RDSon drain-source on-state

resistance

Conditions

Tj ≥ 25 °C; Tj ≤ 175 °C

Tmb = 25 °C; VGS = 10 V;

see Figure 1 and 3

Tmb = 25 °C; see Figure 2

VGS = 10 V; ID = 27 A;

VDS = 80 V; Tj = 25 °C;

see Figure 11

VGS = 10 V; ID = 14 A;

Tj = 25 °C; see Figure 9

and 10

Min Typ Max Unit

-

-

110 V

-

-

27.6 A

-

-

107 W

-

12 -

nC

-

40 50 mΩ

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