PHP212L Просмотр технического описания (PDF) - Philips Electronics
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PHP212L Datasheet PDF : 8 Pages
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Philips Semiconductors
Dual P-channel enhancement
mode MOS transistor
Objective specification
PHP212L
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per P-channel
V(BR)DSS
VGSth
IDSS
IGSS
RDSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
QG
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Switching times
td(on)
turn-on delay time
tr
rise time
ton
turn-on switching time
td(off)
turn-off delay time
tf
fall time
toff
turn-off switching time
Source-drain diode
VSD
source-drain diode forward
voltage
trr
reverse recovery time
CONDITIONS
VGS = 0; ID = −10 µA
VGS = VDS; ID = −1 mA
VGS = 0; VDS = −24 V
VGS = ±12 V; VDS = 0
VGS = −2.5 V; ID = −1 A
VGS = −4.5 V; ID = −2 A
VGS = 0; VDS = −24 V; f = 1 MHz
VGS = 0; VDS = −24 V; f = 1 MHz
VGS = 0; VDS = −24 V; f = 1 MHz
VGS = −6 V; VDD = −15 V; ID = −1 A
VGS = −6 V; VDD = −15 V; ID = −1 A
VGS = −6 V; VDD = −15 V; ID = −1 A
VGS = 0 to −6 V; VDD = −15 V;
ID = −1 A; Rgen = 6 Ω
VGS = 0 to −6 V; VDD = −15 V;
ID = −1 A; Rgen = 6 Ω
VGS = 0 to −6 V; VDD = −15 V;
ID = −1 A; Rgen = 6 Ω
VGS = −6 to 0 V; VDD = −15 V;
ID = −1 A; Rgen = 6 Ω
VGS = −6 to 0 V; VDD = −15 V;
ID = −1 A; Rgen = 6 Ω
VGS = −6 to 0 V; VDD = −15 V;
ID = −1 A; Rgen = 6 Ω
VGD = 0; IS = −1.25 A
IS = −1.25 A; di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
−30 − −
V
−0.5 − −1.1 V
−
− −100 nA
−
− ±100 nA
−
− 0.25 Ω
−
− 0.12 Ω
−
450 −
pF
−
200 −
pF
−
100 −
pF
−
13 −
nC
−
1−
nC
−
4−
nC
−
6−
ns
−
4−
ns
−
10 −
ns
−
29 −
ns
−
16 −
ns
−
45 −
ns
−
− −1.3 V
−
75 −
ns
1997 Jun 20
4
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