EBS52UC8APFA Просмотр технического описания (PDF) - Elpida Memory, Inc
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EBS52UC8APFA Datasheet PDF : 14 Pages
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EBS52UC8APFA
DC Characteristics1 (TA = 0 to 70°C, VDD = 3.3V ± 0.3V, VSS = 0V)
Parameter
Symbol
Grade max.
Unit
Test condition
Notes
Operating current
ICC1
ICC1
-7A
1280
-75
1120
mA
Burst length = 1
tRC = tRC (min.)
mA
1, 2, 3
Standby current in power down
Standby current in non power
down
Active standby current in power
down
Active standby current in non
power down
ICC2P
ICC2N
ICC3P
ICC3N
48
mA
CKE = VIL, tCK = 12ns
6
320
mA
CKE, /CS = VIH,
tCK = 12ns
4
64
mA
CKE = VIL, tCK = 12ns
1, 2, 6
480
mA
CKE, /CS = VIH,
tCK = 12ns
1, 2, 4
Burst operating current
ICC4
1320
mA
tCK = tCK (min.), BL = 4 1, 2, 5
Refresh current
ICC5
-7A
2240
mA
tRC = tRC (min.)
3
ICC5
-75
2000
mA
Self refresh current
ICC6
48
mA
VIH ≥ VDD – 0.2V
VIL ≤ 0.2V
7
Notes: 1. ICC depends on output load condition when the device is selected. ICC (max.) is specified at the output
open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CLK operating current.
7. After self refresh mode set, self refresh current.
DC Characteristics2 (TA = 0 to 70°C, VDD = 3.3V ± 0.3V, VSS = 0V)
Parameter
Input leakage current
Symbol
min.
ILI
–16
Output leakage current
ILO
–3
Output high voltage
Output low voltage
VOH
2.4
VOL
—
max.
16
3
—
0.4
Unit
Test condition
µA
0 ≤ VIN ≤ VDD
µA
0 ≤ VOUT ≤ VDD
DQ = disable
V
IOH = –4mA
V
IOL = 4mA
Notes
Data Sheet E0208E20 (Ver. 2.0)
8
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