DCR1008SF Просмотр технического описания (PDF) - Dynex Semiconductor
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DCR1008SF Datasheet PDF : 8 Pages
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DCR1008SF
100000
IT
QS
tp = 1.6ms
dI/dt
IRM
10000
1000
10000
Max. QS
Min. QS
Max. IRR
Min. IRR
1000
100
100
0.1
Conditions:
Tj = 125˚C, IT = 3000A
10
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.4 Stored charge
0.1
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.022
0.024
0.026
0.027
Anode side
0.038
0.040
0.042
0.043
Anode side cooled
100
Pulse width Frequency Hz
µs
50 100 400
100 150 150 150
200 150 150 125
500 150 150 100
1ms 150 50 25
10ms 20 - -
Table gives pulse power PGM in Watts
10
Upper limit 95%
1
VGD
0.1
0.001
Lower limit 5%
Region of certain
triggering
0.01
0.1
1
10
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics
40
I2t = Î2 x t
2
30
Double side cooled
0.01
0.001
0.001
0.01
0.1
1.0
10
Time - (s)
Fig.6 Transient thermal impedance - junction to case
6/8
20
700
650
600
10
I2t
550
500
0
450
1
10 1 2 3 45 10 20 30 50
ms
Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase = 125˚C)
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