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DCR1008SF

Phase Control Thyristor

Dynex Semiconductor 

DCR1008SF

DYNAMIC CHARACTERISTICS

Symbol

I /I

RRM DRM

dV/dt

dI/dt

VT(TO)

r

T

tgd

IL

IH

t

q

Parameter

Conditions

Typ.

Peak reverse and off-state current

At V /V , T = 125oC

-

RRM DRM case

Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC.

-

Rate of rise of on-state current

From 67% VDRM, IT = 1500A, Repetitive 50Hz -

Gate source1.5A

tr ≤ 0.5µs. Tj = 125oC.

Non-repetitive -

Threshold voltage

At Tvj = 125oC

-

On-state slope resistance

Delay time

Latching current

At T = 125oC

-

vj

VD = 67% VDRM, Gate source 30V, 15Ω

Rise time 0.5µs, Tj = 25oC

-

Tj = 25oC, VD = 5V

350

Holding current

Tj = 25oC, Rg-k = ∞

230

Turn-off time

IT = 3000A, tp = 1ms, Tj = 125˚C,

VRM = 900V, dIRR/dt = 5A/µs,

-

VDR = 2800V, dVDR/dt = 20V/µs linear

Max. Units

150 mA

1000 V/µs

75 A/µs

200 A/µs

1.1

V

0.57 mΩ

2.0

µs

900 mA

600 mA

500 µs

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

VGT

IGT

VGD

V

FGM

VFGN

VRGM

IFGM

P

GM

PG(AV)

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Conditions

VDRM = 5V, Tcase = 25oC

VDRM = 5V, Tcase = 25oC

At VDRM Tcase = 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

Anode positive with respect to cathode

See table. fig. 4

Max. Units

3.5

V

200 mA

0.25 V

30

V

0.25 V

5

V

30

A

150 W

10

W

4/8

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