BUK9506-40B Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
Список матч
BUK9506-40B Datasheet PDF : 15 Pages
| |||
Philips Semiconductors
BUK95/9606-40B
TrenchMOS™ logic level FET
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown
ID = 0.25 mA; VGS = 0 V
voltage
Tj = 25 °C
40
-
-
V
Tj = −55 °C
36
-
-
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 40 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±15 V; VDS = 0 V
VGS = 5 V; ID = 25 A;
Figure 7 and 8
1.1
1.5
2
V
0.5
-
-
V
-
-
2.3
V
-
0.02
1
µA
-
-
500
µA
-
2
100
nA
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
VGS = 4.5 V; ID = 25 A
VGS = 10 V; ID = 25 A
-
5.7
6.4
mΩ
-
-
12.2
mΩ
-
-
7.1
mΩ
-
4.1
5
mΩ
Qg(tot)
total gate charge
VGS = 5 V; VDD = 32 V;
-
Qgs
gate-source charge
ID = 25 A; Figure 14
-
Qgd
gate-drain (Miller) charge
-
Ciss
input capacitance
VGS = 0 V; VDS = 25 V;
-
Coss
output capacitance
f = 1 MHz; Figure 12
-
Crss
reverse transfer capacitance
-
td(on)
tr
turn-on delay time
rise time
VDD = 30 V; RL = 1.2 Ω;
-
VGS = 5 V; RG = 10 Ω
-
td(off)
turn-off delay time
-
tf
fall time
-
Ld
internal drain inductance
from drain lead 6 mm from
-
package to center of die
44
-
nC
11
-
nC
17
-
nC
3 967
4 901
pF
634
760
pF
278
380
pF
43
-
ns
145
-
ns
132
-
ns
92
-
ns
4.5
-
nH
from contact screw on
-
3.5
-
nH
mounting base to center of
die SOT78
from upper edge of drain
-
2.5
-
nH
mounting base to center of
die SOT404
Ls
internal source inductance from source lead to source
-
7.5
-
nH
bond pad
9397 750 11241
Product data
Rev. 01 — 14 May 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5 of 15
Share Link: 