BUK9506-40B Просмотр технического описания (PDF) - Philips Electronics
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BUK9506-40B Datasheet PDF : 15 Pages
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Philips Semiconductors
BUK95/9606-40B
TrenchMOS™ logic level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
Tmb = 25 °C; VGS = 5 V;
Figure 2 and 3
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
IDR
reverse drain current (DC)
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
Tmb = 25 °C; Figure 1
Tmb = 25 °C
IDRM
peak reverse drain current
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche
energy
Tmb = 25 °C; pulsed; tp ≤ 10 µs
unclamped inductive load; ID = 75 A;
VDS ≤ 40 V; VGS = 5 V; RGS = 50 Ω;
starting Tmb = 25 °C
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Min
-
-
-
[1] -
[2] -
[2] -
-
-
−55
−55
[1] -
[2] -
-
-
Max Unit
40
V
40
V
±15
V
129
A
75
A
75
A
516
A
203
W
+175 °C
+175 °C
129
A
75
A
516
A
494
mJ
9397 750 11241
Product data
Rev. 01 — 14 May 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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