BUK7640-100A Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
Список матч
BUK7640-100A Datasheet PDF : 12 Pages
| |||
Nexperia
BUK7640-100A
N-channel TrenchMOS standard level FET
5
VGS(th)
(V)
4
3
2
maximum
typical
minimum
003aaf595
10−1
ID
(A)
10−2
10−3
10−4
003aaf596
2%
typical 98 %
1
10−5
0
−100
0
100
200
Tj (°C)
ID = 1 mA; VDS = VGS
Fig 13. Gate-source threshold voltage as a function of
junction temperature
10−6
0
1
2
3
4
5
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 14. Sub-threshold drain current as a function of
gate-source voltage
4
C
(nF)
3
2
1
Ciss
Coss
Crss
003aaf597
10
VGS
(V)
8
6
4
2
003aaf598
VDS = 14 V
VDS = 44 V
0
10−2
10−1
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
0
0
10
20
30
40
QG (nC)
Tj = 25 °C
Fig 16. Gate-source voltage as a function of gate
charge; typical values
50
IF
(A)
40
003aaf599
30
20
Tj = 175 °C
Tj = 25 °C
10
0
0
0.4
0.8
1.2
VSDS (V)
VGS = 0 V
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK7640-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 April 2011
© Nexperia B.V. 2017. All rights reserved
7 of 12
Share Link: 