BUK7640-100A Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK7640-100A Datasheet PDF : 12 Pages
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Nexperia
BUK7640-100A
N-channel TrenchMOS standard level FET
100
Pder
(%)
80
60
40
20
0
0
003aaf471
50
100
150
200
Tmb (°C)
100
ID
(%)
80
60
40
20
0
0
003aaf586
50
100
150
200
Tmb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2.
VGS ≥ 10 V
Normalized continuous drain current as a
function of mounting base temperature
103
ID
(A)
RDS(on) = VDS / ID
102
003aaf587
tp = 1 μs
10 μs
100 μs
10
1 ms
DC
10 ms
100 ms
1
1
10
102
103
VDS (V)
Tmb = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
100
WDSS
(%)
80
003aaf600
60
40
20
0
20
60
100
140
180
Tmb (°C)
ID = 75 A
Fig 4. Normalised drain-source non-repetitive
avalanche energy as a function of
mounting-base temperature
BUK7640-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 April 2011
© Nexperia B.V. 2017. All rights reserved
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