BUK7620-55A Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK7620-55A Datasheet PDF : 13 Pages
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Nexperia
BUK7620-55A
N-channel TrenchMOS standard level FET
ID 200
(A) 180
160
140
03nc63
VGS (V) =
20
14
12
11
10
120
9.0
100
8.5
8.0
80
7.5
7.0
60
6.5
40
6.0
20
5.5
5.0
0
4.5
0
2
4
6
8
10
VDS (V)
30
RDSon
(mΩ)
25
03nc62
20
15
10
5
10
15
20
25
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
10−1
ID
(A)
10−2
03aa35
min typ max
25
gfs
(S)
20
03nc60
10−3
15
10−4
10
10−5
5
10−6
0
2
4
6
VGS (V)
0
0
20
40
60
80
ID (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7620-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 June 2010
© Nexperia B.V. 2017. All rights reserved
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