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BUK7620-55A Просмотр технического описания (PDF) - NXP Semiconductors.

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BUK7620-55A
NXP
NXP Semiconductors. NXP
BUK7620-55A Datasheet PDF : 13 Pages
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Nexperia
BUK7620-55A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS
internal source
inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11
VDS = 55 V; VGS = 0 V; Tj = 175 °C
VDS = 55 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 12; see Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VDS = 30 V; RL = 1.2 ; VGS = 10 V;
RG(ext) = 10 ; Tj = 25 °C
from upper edge of drain mounting base
to centre of die ; Tj = 25 °C
from drain lead 6 mm from package to
centre of die ; Tj = 25 °C
from source lead to source bond pad ;
Tj = 25 °C
IS = 20 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
IS = 20 A; dIS/dt = -100 A/µs;
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
55 -
-
V
50 -
-
V
1
-
-
V
2
3
4
V
-
-
4.4 V
-
-
500 µA
-
0.05 10 µA
-
2
100 nA
-
2
100 nA
-
-
40
m
-
17
20
m
-
1200 1592 pF
-
290 356 pF
-
179 240 pF
-
15
-
ns
-
74 -
ns
-
70
-
ns
-
40
-
ns
-
2.5 -
nH
-
4.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
45
-
ns
-
110 -
nC
BUK7620-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 June 2010
© Nexperia B.V. 2017. All rights reserved
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