Preliminary data
BUZ 101SL-4
Avalanche energy EAS = f (Tj)
parameter:ID=4.1A,VDD =25 V
RGS =25 Ω , L = 10.7mH
100
mJ
EAS 80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 °C 180
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 4 A
16
V
VGS
12
10
8
6
0,2 VDS max
0,8 VDS max
4
2
0
0 4 8 12 16 20 24 28 nC 34
QGate
65
V
V(BR)DSS
61
59
57
55
53
51
49
-60 -20
20
60 100 °C 180
Tj
Semiconductor Group
8
02/Oct/1997