C67078-S Просмотр технического описания (PDF) - Infineon Technologies

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C67078-S

SIPMOS ® Power Transistor

Infineon Technologies 

Preliminary data

BUZ 101SL-4

Drain-source on-resistance

RDS (on) = ƒ(Tj)

parameter: ID = 4.1 A, VGS = 5 V

Gate threshold voltage

VGS (th) = ƒ(Tj)

parameter: VGS = VDS, ID = 30 µA

0.22

Ω

RDS

0.18

(on)

0.16

0.14

0.12

0.10

98%

0.08

typ

0.06

0.04

0.02

0.00

-60 -20

20

60 100 °C 180

Tj

4.6

V

4.0

VGS(th) 3.6

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0.0

-60 -20

98%

typ

2%

20

60 100 °C 180

Tj

Typ. capacitances

C = f (VDS)

parameter:VGS = 0V, f = 1MHz

10 4

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

10 2

pF

C

10 3

Ciss

A

IF

10 1

Coss

10 2

Crss

10 1

0

5 10 15 20 25 30 V 40

VDS

Semiconductor Group

7

10 0

Tj = 25 °C typ

Tj = 175 °C typ

Tj = 25 °C (98%)

Tj = 175 °C (98%)

10 -1

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

VSD

02/Oct/1997

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