FDS6678A Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS6678A Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = 7.5A
8
6
VDS = 5V
10V
15V
4
2
0
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
VGS = 4.5V
DC
0.1 SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2400
2000
1600
1200
800
400
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 135 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6678A Rev C(W)
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