FDS6678A Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге

Компоненты Описание

Список матч

FDS6678A

30V N-Channel PowerTrench® MOSFET

Fairchild Semiconductor 

April 2001

FDS6678A

30V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low RDS(ON) and fast switching speed.

Applications

• DC/DC converter

Features

• 7.5 A, 30 V.

RDS(ON) = 24 mΩ @ VGS = 4.5 V

RDS(ON) = 20 mΩ @ VGS = 10 V

• High performance trench technology for extremely

low RDS(ON)

• Low gate charge (13 nC typical)

• High power and current handling capability

D

D

D

D

SO-8

G

SS

S

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

VDSS

VGSS

ID

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

PD

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS6678A

FDS6678A

13’’

5

6

7

8

Ratings

30

±12

7.5

40

2.5

1.2

1.0

-55 to +150

50

25

Tape width

12mm

4

3

2

1

Units

V

V

A

W

°C

°C/W

°C/W

Quantity

2500 units

2001 Fairchild Semiconductor Corporation

FDS6678A Rev C(W)

Share Link: