C2612 Просмотр технического описания (PDF) - New Jersey Semiconductor
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C2612 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC2612
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 30mA; IB= 0
400
V
VIBRIEBO Emitter-Base Breakdown Vltage
IE= 10mA; lc=0
7
V
VcE(sat) Collector-Emitter Saturation Voltage IC=1.5A;IB=0.3A
VeE(sat) Base-Emitter Saturation Voltage
IC=1.5A;IB=0.3A
ICBO
Collector Cutoff Current
VCB= 400V; IE 0
1.0
V
1.5
V
100 u A
ICEO
Collector Cutoff Current
VCE= 350V; RBE- ro
100 u A
hpE-1
DC Current Gain
lc= 1 -5A; VCE= 5V
15
hpE-2
DC Current Gain
lc= 3A; VGE= 5V
7
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= 3A,lsi= -lB2=0.6A,Vcc*;150V
1.0 u s
2.5 M s
1.0 M s
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