C2612 Просмотр технического описания (PDF) - New Jersey Semiconductor
Номер в каталоге
Компоненты Описание
Список матч
C2612 Datasheet PDF : 2 Pages
| |||
j
, One..
{~s
20 STERNAVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC2612
DESCRIPTION
• High Collector-Emitter Sustaining Voltage-
: VCECHSUSP 400V(Min)
• Good Linearity of hFE
• Low Saturation Voltage
APPLICATIONS
• Designed for high voltage, high speed and high power
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
!c
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25°C
Tj .. Junction Temperature
1.5
A
30
W
150
'C
Tstg
Storage Temperature Range
-55-150
"C
*'
j
<
3
PIN 1. BASE
2. COLLECTOR
3. EMITTER
TO-220C package
"B1
-« V H • • • • " F
Mi
Ui
=hGTt
A*
.->
rt
K
-H »S
—,
u
H c; |»~
- Rk
1C^
,
I
T
mm
DIM MtN MAX
A 15,50 15.90
B 9.90 10.20
C 4.20 4.50
D 0.70 0.90
F 3.40 3,70
G 4.98 5.18
H 2.6S 2.90
j 0.44 0,60
K 13.00 13.40
L 1.20 1,45
Q 2.70 2.90
R 2.30 2.70
S 1.29 1.35
U 6.45 6.65
U 8.66 8.86
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\itrumt
notice. Information furnished hy N.I Semi-Conductorsis believed to he both accurate and reliable at the time of going
to press. However. N.I Semi-Conductors assumes no responsibility for any errors or omissionsdiscovered in its use.
N.I Scmi-Conduclors encourages customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors
Share Link: 