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TGA1073C-EPU Просмотр технического описания (PDF) - TriQuint Semiconductor

Номер в каталоге
Компоненты Описание
Список матч
TGA1073C-EPU
TriQuint
TriQuint Semiconductor TriQuint
TGA1073C-EPU Datasheet PDF : 5 Pages
1 2 3 4 5
Advance Product Information
RF-Probe Performance Summary
Frequency
Quiescent Point (VD / ID)
Small Signal Gain Mean
Small Signal Gain Sigma
Output P1dB Mean
Output P1dB Sigma
Number of Process Lots
Number of Wafers
Number of Devices
38 GHz
6.0 V / 240 mA
15.3 dB
0.39 dB
26.0 dBm
0.57 dB
5
23
~ 2200
Typical Performance Over the 36-41 GHz Band
Parameter
Small Signal Gain
Gain Flatness
Output P1dB
Saturated Output Power
Saturated PAE
Output OTOI
IMR3 @ SCL = P1dB - 10dB
Input Return Loss
Output Return Loss
Reverse Isolation
Quiescent Current
Unit
dB
dBpp
dBm
dBm
%
dBm
dBc
dB
dB
dB
mA
+5V Supply
24
26
23
225
+6V Supply
15
1
25
27
22
34
34
-10
-8
-35
240
+7V Supply
26
28
20
260
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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