CY7C1041CV33-15ZXI(2008) Просмотр технического описания (PDF) - Cypress Semiconductor
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CY7C1041CV33-15ZXI Datasheet PDF : 14 Pages
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CY7C1041CV33
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
CIN
COUT
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz, VCC = 3.3V
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
ΘJA Thermal Resistance
(Junction to Ambient)
ΘJC Thermal Resistance
(Junction to Case)
Test Conditions
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51
SOJ
25.99
18.8
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveforms [3]
Max
Unit
8
pF
8
pF
TSOP II
42.96
10.75
FBGA
38.15
Unit
°C/W
9.15 °C/W
10-ns devices:
OUTPUT
Z = 50Ω
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
50 Ω
1.5V
(a)
30 pF*
12-, 15-, 20-ns devices: R 317Ω
3.3V
OUTPUT
30 pF*
R2
351Ω
(b)
3.0V
GND
ALL INPUT PULSES
90%
10%
90%
10%
Rise Time: 1 V/ns
(c)
Fall Time: 1 V/ns
High-Z characteristics:
3.3V
R 317Ω
OUTPUT
5 pF
R2
351Ω
(d)
Note
3. AC characteristics (except High-Z) for 10-ns parts are tested using the load conditions shown in Figure (a). All other speeds are tested using the Thevenin load shown
in Figure (b). High-Z characteristics are tested for all speeds using the test load shown in Figure (d).
Document Number: 38-05134 Rev. *I
Page 5 of 14
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