BUK7880-55/CU Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
Список матч
BUK7880-55/CU Datasheet PDF : 12 Pages
| |||
NXP Semiconductors
BUK7880-55
N-channel TrenchMOS standard level FET
10- 1
ID
(A)
10- 2
003aaf278
10- 3
10- 4
2%
typical
98 %
10- 5
10- 6
1
2
3
Tj = 25 °C; VDS = VGS
4
5
VGS (V)
Fig. 12. Sub-threshold drain current as a function of
gate-source voltage
12
VGS
(V)
8
003aaf280
VDS = 14 V
VDS = 44 V
4
1.0
C
(nF)
0.8
Ciss
Coss
0.6
Crss
0.4
003aaf279
0.2
0
10- 2
10- 1
1
VGS = 0 V; f = 1 MHz
10
102
VDS (V)
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
40
IF
(A)
30
003aaf281
20
Tj = 150 °C
Tj = 25 °C
10
0
0
5
Tj = 25 °C; ID = 7 A
10
15
QG (nC)
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
0
0
0.5
1.0
1.5
2.0
VSDS (V)
VGS = 0 V
Fig. 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
BUK7880-55
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 March 2016
© NXP Semiconductors N.V. 2016. All rights reserved
7 / 11
Share Link: 