BUK7880-55/CU Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK7880-55/CU Datasheet PDF : 12 Pages
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NXP Semiconductors
BUK7880-55
N-channel TrenchMOS standard level FET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 150 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C
IDSS
drain leakage current VDS = 55 V; VGS = 0 V; Tj = 25 °C
VDS = 55 V; VGS = 0 V; Tj = 150 °C
IGSS
gate leakage current VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 150 °C
VGS = -10 V; VDS = 0 V; Tj = 150 °C
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 5 A; Tj = 150 °C
VGS = 10 V; ID = 5 A; Tj = 25 °C
V(BR)GSS
gate-source
breakdown voltage
VDS = 0 V; Tj = 25 °C; IG = 1 mA
VDS = 0 V; Tj = 25 °C; IG = -1 mA
Dynamic characteristics
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 30 V; RL = 4.3 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tmb = 25 °C; ID = 7 A
td(off)
turn-off delay time
tf
fall time
gfs
transfer conductance VDS = 25 V; ID = 5 A; Tj = 25 °C
Source-drain diode
VSD
source-drain voltage IS = 5 A; VGS = 0 V; Tj ≥ -55 °C;
Tj ≤ 175 °C
trr
reverse recovery time IS = 5 A; dIS/dt = -100 A/µs;
Qr
recovered charge
VGS = -10 V; VDS = 30 V; Tj ≥ -55 °C;
Tj ≤ 175 °C
BUK7880-55
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 March 2016
Min Typ Max Unit
55
-
-
V
50
-
-
V
1.2 -
-
V
2
3
4
V
-
-
4.4 V
-
0.05 10
µA
-
-
100 µA
-
0.04 1
µA
-
0.04 1
µA
-
-
10
µA
-
-
10
µA
-
-
148 mΩ
-
65
80
mΩ
16
-
-
V
16
-
-
V
-
365 500 pF
-
110 135 pF
-
60
85
pF
-
9
14
ns
-
15
25
ns
-
18
27
ns
-
12
18
ns
1
4
-
S
-
0.85 1.1 V
-
38
-
ns
-
0.2 -
µC
© NXP Semiconductors N.V. 2016. All rights reserved
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