BUK7880-55 Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK7880-55 Datasheet PDF : 12 Pages
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NXP Semiconductors
BUK7880-55
N-channel TrenchMOS standard level FET
40
ID
(A)
VGS (V) = 16
12
10
30
20
10
4.5 4.0
003aaf272
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
120
RDS(on)
(mΩ)
100
80
VGS (V) = 6.0
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6.5
7.0
8.0
9.0
10
0
0
2
4
6
8
10
VDS (V)
Tj = 25 °C
60
0
5
10
15
20
25
ID (A)
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a
Fig. 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
20
ID
(A)
15
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8
gfs
(S)
6
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10
4
5
Tj = 150 °C Tj = 25 °C
0
0
2
4
VDS > ID x RDSon
6
8
VGS (V)
Fig. 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
2.0
003aaf276
a
1.5
2
0
4
8
VDS > ID x RDSon
12
16
20
ID (A)
Fig. 9. Forward transconductance as a function of
drain current; typical values
5
VGS(th)
(V)
4
maximum
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typical
3
1.0
minimum
2
0.5
- 100
0
ID = 5 A; VGS = 10 V
100
200
Tmb (°C)
Fig. 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
1
- 100
0
100
200
Tj (°C)
ID = 1 mA; VDS = VGS
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
BUK7880-55
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 March 2016
© NXP Semiconductors N.V. 2016. All rights reserved
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