HTG12G0 Просмотр технического описания (PDF) - Holtek Semiconductor
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HTG12G0 Datasheet PDF : 31 Pages
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HTG12G0
D.C. Characteristics
Symbol
Parameter
VDD
IDD
ISTB
VIL1
VIH1
VIL2
VIH2
IOL1
IOH1
IOL2
IOH2
IOL3
IOH3
IOL4
IOH4
RPH1
RPH2
Operating Voltage
Operating Current
Standby Current
(RTC OSC ON)
and LCD ON
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
Port A, BZ and BZ
Output Sink Current
Port A, BZ and BZ
Output Source Current
Segment 0~7 Output
Sink Current
Segment 0~7 Output
Source Current
Segment 8~49 Output
Sink Current
Segment 8~49 Output
Source Current
Common Output Sink
Current
Common Output
Source Current
Pull-high Resistance
Pull-high Resistance
Test Conditions
VDD
Conditions
—
—
3V No load, fSYS=500kHz
3V System halt
3V PS, PP
3V PS, PP
3V RES
3V RES
3V VDD=3V, VOL=0.3V
3V VDD=3V, VOH=2.7V
3V VLCD=3V, VOL=0.3V
3V VLCD=3V, VOH=2.7V
3V VLCD=3V, VOL=0.3V
3V VLCD=3V, VOH=2.7V
3V VLCD=3V, VOL=0.3V
3V VLCD=3V, VOH=2.7V
3V PS, PP
3V RES
Ta=25°C
Min. Typ. Max. Uint
2.4 — 3.3 V
— 100 500 µA
— 10 20 µA
0
— 0.6 V
2.1 — 3.0 V
0
— 0.6 V
2.5 — 3.0 V
1.5 3.0 — mA
–0.5 –1.5 — mA
80 100 — µA
–50 –70 — µA
40 60 — µA
–20 –40 — µA
100 120 — µA
–100 –130 — µA
15 — 200 kΩ
100 — 300 kΩ
6
14th May ’99
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