BTS112A Просмотр технического описания (PDF) - Infineon Technologies

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BTS112A

TEMPFET®

Infineon Technologies 

TEMPFET® BTS 112 A

Electrical Characteristics

at Tj = 25 ˚C, unless otherwise specified.

Parameter

Symbol

min.

Static Characteristics

Drain-source breakdown voltage

VGS = 0, ID = 0.25 mA

Gate threshold voltage

VGS = VDS, ID = 1.0 mA

Zero gate voltage drain current

VGS = 60 V, VDS = 0

Tj = 25 °C

Tj = 150 °C

Gate-source leakage current

VGS = ± 20 V, VDS = 0

Tj = 25 °C

Tj = 150 °C

Drain-source on-state resistance

VGS = 10 V, ID = 7.5 A

V(BR)DSS

60

VGS(th)

2.5

I DSS

–

–

I GSS

–

–

RDS(on)

–

Dynamic Characteristics

Forward transconductance

VDS ≥ 2 × ID × R , DS(on)max ID = 7.5 A

gfs

3.0

Input capacitance

VGS = 0, VDS = 25 V, f = 1 MHz

Ciss

–

Output capacitance

VGS = 0, VDS = 25 V, f = 1 MHz

Coss

–

Reverse transfer capacitance

VGS = 0, VDS = 25 V, f = 1 MHz

Crss

–

Turn-on time ton, (ton = td(on) + tr)

td(on)

–

VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t r

–

Turn-off time toff, (toff = td(off) + tf)

td(off)

–

VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω tf

–

Values

Unit

typ.

max.

V

–

–

3.0

3.5

µA

0.1

1.0

10

100

10

100

nA

2

4

µA

Ω

0.12

0.15

S

5.7

–

pF

360

480

160

250

50

90

15

25

ns

30

45

40

55

55

75

2

19.02.04

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