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MJE16002 Просмотр технического описания (PDF) - ON Semiconductor

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MJE16002
SWITCHMODE Series NPN Silicon Power Transistors
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MJE16002 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
MJE16002
TYPICAL DYNAMIC CHARACTERISTICS
10000
5000
VBE(off) = 0 V
2000
VBE(off) = 2.0 V
1000
500
VBE(off) = 5.0 V
200
100
0.5
βf = 5
TJ = 75°C
VCC = 20 V
0.7
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Storage Time
10000
5000
2000
1000
500
200
100
0.5
VBE(off) = 0 V
VBE(off) = 2.0 V
βf = 10
TJ = 75°C
VCC = 20 V
VBE(off) = 5.0 V
0.7
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Storage Time
1000
500
200
100
50
20
10
0.5
−2.0
V
−5.0
0V
V
VBE(off) = 0 V
βf = 5
TJ = 75°C
VCC = 20 V
VBE(off) = 2.0 V
VBE(off) = −5.0 V
0.7
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Collector Current Fall Time
1000
−2.0
500
V
200
−5.0
V 0V
100
VBE(off) = 0 V
50
20
10
0.5
βf = 10
TJ = 75°C
VCC = 20 V
VBE(off) = 2.0 V
VBE(off) = 5.0 V
0.7
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Collector Current Fall Time
1000
500
−2.0
V
200
100
50
20
10
0.5
0V
−5.0
V
VBE(off) = 0 V
βf = 5
TJ = 75°C
VCC = 20 V
VBE(off) = 2.0 V
VBE(off) = 5.0 V
0.7
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Crossover Time
1000
−2.0
500
V
200
0V
100
−5.0
V
50
VBE(off) = 0 V
20
10
0.5
βf = 10
TJ = 75°C
VCC = 20 V
VBE(off) = 2.0 V
VBE(off) = 5.0 V
0.7
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Crossover Time
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