MJE16002 Просмотр технического описания (PDF) - ON Semiconductor
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MJE16002 Datasheet PDF : 11 Pages
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MJE16002
60
50
30
20
10
7.0
5.0
3.0
0.1
TJ = 100°C
25°C
−55 °C
VCE = 5.0 V
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
2.0
IC = 1 A
2A
3A 4A 5A
1.0
0.7
0.5
0.3
0.2 TJ = 25°C
0.1
0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
IB, BASE CURRENT (AMPS)
2.0 3.0
Figure 2. Collector Saturation Region
5.0
3.0
2.0
1.0
βf = 10
TJ = 100°C
0.5
βf = 10
TJ = 25°C
0.2
βf = 5
TJ = 25°C
0.1
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector−Emitter Saturation
Region
3.0
2.0
1.5
1.0
βf = 5
TJ = 25°C
0.7
0.5
βf = 10
TJ = 100°C
0.3
0.1
0.2
0.5
1.0
2.0
5.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Base−Emitter Voltage
TYPICAL STATIC CHARACTERISTICS (continued)
104
103
TJ = 150°C
102
125°
10C0°
101
7C5°
C
100
REVERSE
FORWARD
10−1
−0.4
25°
VCE = 250 Vdc
C
−0.2
0
+0.2
+0.4
+0.6
VBE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 5. Collector Cutoff Region
10000
1000
100
10
0.1
TJ = 25°C
Cib
Cob
1.0
10
100
850
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
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