74ABT544(2009) Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
Список матч
74ABT544
(Rev.:2009)
(Rev.:2009)
NXP Semiconductors.
74ABT544 Datasheet PDF : 15 Pages
| |||
NXP Semiconductors
74ABT544
Octal latched transceiver with dual enable; inverting; 3-state
Table 6. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
VOL(pu)
II
IOFF
IO(pu/pd)
IOZ
ILO
IO
ICC
∆ICC
CI
CI/O
power-up LOW-level
output voltage
input leakage current
VCC = 5.5 V; IO = 1 mA;
VI = GND or VCC
VCC = 5.5 V; VI = GND or 5.5 V
control pins
An, Bn
power-off leakage
current
VCC = 0 V; VI or VO ≤ 4.5 V
power-up/power-down VCC = 2.1 V; VO = 0.5 V;
output current
VI = GND or VCC;
OEAB, OEBA don’t care
OFF-state output
current
VCC = 5.5 V; VI = VIL or VIH
VO = 2.7 V
VO = 0.5 V
output leakage current HIGH-state; VO = 5.5 V;
VCC = 5.5 V; VI = GND or VCC
output current
VCC = 5.5 V; VO = 2.5 V
supply current
VCC = 5.5 V; VI = GND or VCC
outputs HIGH-state
outputs LOW-state
outputs disabled
additional supply
current
input capacitance
input/output
capacitance
per input pin; VCC = 5.5 V;
one input pin at 3.4 V, other inputs
at VCC or GND
VI = 0 V or VCC
outputs disabled; VO = 0 V or VCC
25 °C
−40 °C to +85 °C Unit
Min Typ Max Min Max
[1] - 0.13 0.55
-
0.55 V
- ±0.01 ±1.0
-
- ±5.0 ±100 -
- ±5.0 ±100 -
[2] - ±5.0 ±50
-
±1.0 µA
±100 µA
±100 µA
±50 µA
- 5.0 50
-
- −5.0 −50
-
- 5.0 50
-
[3] −180 −65 −50 −180
50 µA
−50 µA
50 µA
−50 mA
- 110 250
-
- 20 30
-
- 110 250
-
[4] -
0.3 1.5
-
250 µA
30 mA
250 µA
1.5 mA
-
4
-
-
-
7
-
-
- pF
- pF
[1] For valid test results, data must not be loaded into the flip-flops (or latches) after applying the power.
[2] This parameter is valid for any VCC between 0 V and 2.1 V, with a transition time of up to 10 ms. From VCC = 2.1 V to VCC = 5 V ± 10 %,
a transition time of up to 100 ms is permitted.
[3] Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
[4] This is the increase in supply current for each input at 3.4 V.
10. Dynamic characteristics
Table 7. Dynamic characteristics
GND = 0 V; for test circuit, see Figure 10.
Symbol Parameter
Conditions
tPLH
LOW to HIGH
An to Bn or Bn to An; see Figure 5
propagation delay LEBA to An or LEAB to Bn; see Figure 6
25 °C; VCC = 5.0 V −40 °C to +85 °C; Unit
VCC = 5.0 V ± 0.5 V
Min Typ Max Min
Max
1.7 3.0 3.8 1.7
4.7 ns
2.1 3.5 4.2 2.1
5.2 ns
74ABT544_4
Product data sheet
Rev. 04 — 15 January 2009
© NXP B.V. 2010. All rights reserved.
6 of 15
Share Link: