2SB859 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SB859

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB859

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞

V(BR)EBO Emitter-base breakdown votage

IE=-10μA; IC=0

VCEsat Collector-emitter saturation voltage IC=-2 A;IB=-0.2 A

VBE

Base-emitter voltage

IC=-1A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-80V; IE=0

hFE-1

DC current gain

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-0.1A ; VCE=-5V

Cob

Collector output capacitance

IC=0; VCB=-20V;f=1MHz

fT

Transition frequency

IC=-0.5A ; VCE=-5V

‹ hFE-1 classifications

B

C

60-120

100-200

MIN TYP. MAX UNIT

-80

V

-5

V

-2.0

V

-1.5

V

-0.1

mA

60

200

35

75

pF

20

MHz

2

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