2SB859 Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
Список матч
2SB859 Datasheet PDF : 4 Pages
| |||
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB859
DESCRIPTION
·
·With TO-220C package
·Complement to type 2SD1135
APPLICATIONS
·Low frequency power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICP
Collector current-Peak
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
-100
-80
-5
-4
-8
40
150
-45~150
UNIT
V
V
V
A
A
W
℃
℃
Share Link: 