BUK9515-100A Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK9515-100A Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK9515-100A
N-channel TrenchMOS logic level FET
250
ID
(A)
200
150
VGS (V) = 10
5
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4.0
3.8
3.6
3.4
3.2
100
3.0
2.8
50
2.6
2.4
0
0
2
4
6
8
10
VDS (V)
Tj = 25 °C
Fig 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
19
RDS(on)
(mΩ)
17
15
VGS (V) = 3.0
3.2
3.4
3.6
4.0
5.0
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13
11
0
20
40
60
80
100
ID (A)
Tj = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
14.5
RDS(on)
(mΩ)
13.5
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12.5
11.5
10.5
3
5
7
9
11
VGS (V)
Tj = 25 °C
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
100
ID
(A)
80
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60
40
20
Tj = 175 °C
Tj = 25 °C
0
0
1
2
3
4
VGS (V)
VDS > ID x RDSon
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
BUK9515-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 19 April 2011
© NXP B.V. 2011. All rights reserved.
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