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BTS113A

TEMPFET®

Infineon Technologies 

TEMPFET® BTS 113 A

Electrical Characteristics (cont’d)

at Tj = 25 °C, unless otherwise specified.

Parameter

Symbol

min.

Reverse Diode

Continuous source current

IS

Pulsed source current

I SM

Diode forward on-voltage

VSD

I F = 11.5 A, VGS = 0 V

Reverse recovery time

t rr

I F = I S, diF/dt = 100 A/µs, VR = 30 V

Reverse recovery charge

Q rr

I F = I S, diF/dt = 100 A/µs, VR = 30 V

Temperature Sensor

Forward voltage

I TS(on) = 5 mA, Tj = – 55 ... + 150 °C

Sensor override, tp ≤ 100 µs

Tj = – 55 ... + 160 °C

Forward current

Tj = – 55 ... + 150 °C

Sensor override, tp ≤ 100 µs

Tj = – 55 ... + 160 °C

Holding current, VTS(off) = 5.0 V, Tj = 25 °C

Tj = 150 °C

Switching temperature

VTS = 5.0 V

Turn-off time

VTS = 5.0 V, ITS(on) = 2 mA

VTS(on)

ITS(on)

IH

TTS(on)

toff

–

–

–

–

–

–

–

–

–

0.05

0.05

150

0.5

Values

Unit

typ.

max.

–

11.5

A

–

46

V

1.3

1.6

ns

60

–

µC

0.10

–

V

1.4

1.5

–

10

mA

–

5

–

600

0.3

0.5

0.2

0.3

°C

–

–

µs

–

2.5

3

19.02.04

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