BTS113A Просмотр технического описания (PDF) - Infineon Technologies

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BTS113A

TEMPFET®

Infineon Technologies 

TEMPFET® BTS 113 A

Electrical Characteristics

at Tj = 25 °C, unless otherwise specified.

Parameter

Static Characteristics

Drain-source breakdown voltage

VGS = 0, ID = 0.25 mA

Gate threshold voltage

VGS = VDS, ID = 1 mA

Zero gate voltage drain current

VGS = 0 V, VDS = 60 V

Tj = 25 °C

Tj = 125 °C

Gate-source leakage current

VGS = ± 20 V, VDS = 0

Tj = 25 °C

Tj = 150 °C

Drain-source on-state resistance

VGS = 4.5 V, ID = 5.8 A

Dynamic Characteristics

Forward transconductance

VDS ≥ 2 × ID × R , DS(on)max ID = 5.8 A

Input capacitance

VGS = 0, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0, VDS = 25 V, f = 1 MHz

Turn-on time ton, (ton = td(on) + tr)

VCC = 30 V, VGS = 5.0 V, ID = 3.0 A,

RGS = 50 Ω

Turn-off time toff, (toff = td(off) + tf)

VCC = 30 V, VGS = 5.0 V, ID = 3.0 A,

RGS = 50 Ω

Symbol

min.

V(BR)DSS

60

VGS(th)

1.6

IDSS

–

–

IGSS

–

–

RDS(on)

–

gfs

4.5

Ciss

–

Coss

–

Crss

–

td(on)

–

tr

–

td(off)

–

tf

–

Values

Unit

typ.

max.

V

–

–

2.0

2.5

µA

0.1

1.0

10

100

10

100

nA

2

4

µA

Ω

0.14

0.17

S

7.5

–

pF

420

560

160

250

60

110

15

25

ns

55

80

45

60

40

55

2

19.02.04

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