FDU6612A Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDU6612A Datasheet PDF : 6 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy Single Pulse, VDD = 27 V, ID=10 A
IAR
Drain-Source Avalanche Current
51
mJ
10
A
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
30
25
V
mV/°C
1
µA
±100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
1 2.0
–5.1
VGS = 10 V, ID = 9.5 A
15
VGS = 4.5 V, ID = 8 A
20
VGS = 10 V, ID = 9.5 A, TJ=125°C
23
VDS = 5 V, ID = 9.5 A
28
3
V
mV/°C
20
mΩ
28
33
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
VGS = 15 Mv, f = 1.0 MHz
660
pF
170
pF
90
pF
2.3
Ω
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 15 V, ID = 9.5 A,
VGS = 5 V
9
18
ns
5
10
ns
24 38
ns
4
8
ns
6.7 9.4
nC
2.1
nC
2.7
nC
FDD6612A/FDU6612A Rev. E(W)
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