FDU6612A Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDU6612A Datasheet PDF : 6 Pages
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February 2004
FDD6612A/FDU6612A
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
Applications
• DC/DC converter
• Motor Drives
Features
• 30 A, 30 V
RDS(ON) = 20 mΩ @ VGS = 10 V
RDS(ON) = 28 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast Switching
• High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
@TA=25°C
Pulsed
(Note 3)
(Note 1a)
(Note 1a)
PD
TJ, TSTG
Power Dissipation
@TC=25°C
(Note 1)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30
±20
30
9.5
60
36
2.8
1.3
–55 to +175
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6612A
FDD6612A
D-PAK (TO-252)
FDU6612A
FDU6612A
I-PAK (TO-251)
Reel Size
13’’
Tube
3.9
45
96
Tape width
12mm
N/A
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
75
©2004 Fairchild Semiconductor Corporation
FDD6612A/FDU6612A Rev E(W)
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